A thorough investigation of the progressive reset dynamics in HfO{sub 2}-based resistive switching structures
- Dipartimento di Ingegneria dell'Informazione, Elettronica e Telecomunicazioni, Università di Roma “Sapienza,” 00184 Rome (Italy)
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra (Spain)
According to previous reports, filamentary electron transport in resistive switching HfO{sub 2}-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.
- OSTI ID:
- 22482102
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells
Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO{sub 3} thin films
Journal Article
·
Mon Jun 16 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22299909
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells
Journal Article
·
Wed May 28 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22304325
Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO{sub 3} thin films
Journal Article
·
Mon Sep 07 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22494836