Roles of grain boundaries on the semiconductor to metal phase transition of VO{sub 2} thin films

Journal Article · Mon Sep 07 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930831· OSTI ID:22482037

Jian, Jie; Jacob, Clement; Chen, Aiping ^[1]; Zhang, Wenrui; Wang, Han; Huang, Jijie ^[2]; Wang, Haiyan ^[1]

---

1. Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843-3128 (United States)
2. Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3128 (United States)

Vanadium dioxide (VO{sub 2}) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO{sub 2} thin films are characterized and correlated to the GB density. The VO{sub 2} films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO{sub 2} SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.

• OSTI ID: 22482037
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL LATTICES
ENERGY BEAM DEPOSITION
GRAIN BOUNDARIES
GRAIN SIZE
LASER RADIATION
METALS
PHASE TRANSFORMATIONS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
TRANSITION AMPLITUDES
TRANSMISSION ELECTRON MICROSCOPY
VANADIUM OXIDES