Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

Journal Article · Thu Oct 15 04:00:00 EDT 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.06.016· OSTI ID:22475969

Gao, J. ^[1]; Zhang, J. W.; Liu, Y. M.; Sun, Z. Q. ^[1]

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1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China)

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2} films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.

• OSTI ID: 22475969
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 70; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
DENSITY
DEPOSITION
DIELECTRIC MATERIALS
ELECTRICAL PROPERTIES
ELLIPSOMETRY
EMISSION
HAFNIUM
HAFNIUM OXIDES
LEAKAGE CURRENT
OPTICAL PROPERTIES
SPECTROSCOPY
TEMPERATURE DEPENDENCE
THIN FILMS
ULTRAVIOLET RADIATION