High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor

Journal Article · Mon Jan 06 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4860998· OSTI ID:22257115

Häusermann, R. ^[1]; Chiba, D. ^[2]; Shimamura, K.; Ono, T. ^[2]; Batlogg, B. ^[3]

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1. Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan)
2. Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)
3. Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

• OSTI ID: 22257115
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
HAFNIUM OXIDES
MONOCRYSTALS
ORGANIC SEMICONDUCTORS
THIN FILMS