Control of gallium incorporation in sol–gel derived CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films for photovoltaic applications

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.04.016· OSTI ID:22475896

Bourlier, Yoan ^[1]; Cristini Robbe, Odile ^[1]; Lethien, Christophe ^[1]; others, and

---

1. Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France)

Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.

• OSTI ID: 22475896
• Journal Information: Materials Research Bulletin, Vol. 70; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOPYRITE
CHELATING AGENTS
COPPER COMPOUNDS
EFFICIENCY
GALLIUM ADDITIONS
GALLIUM COMPOUNDS
GLASS
INDIUM COMPOUNDS
LATTICE PARAMETERS
LAYERS
OPTICAL PROPERTIES
OXIDES
PHOTOVOLTAIC EFFECT
PRECIPITATION
SODIUM CARBONATES
SOL-GEL PROCESS
SOLID SOLUTIONS
SULFUR COMPOUNDS
THIN FILMS
X-RAY DIFFRACTION