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Title: Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

Abstract

A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors.

Authors:
;  [1]
  1. Ulyanovsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22472259
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; ELECTRONS; GRAPH THEORY; INTEGRAL EQUATIONS; INTEGRALS; NANOSTRUCTURES; RANDOMNESS; SEMICONDUCTOR MATERIALS; TIME-OF-FLIGHT METHOD; TOPOLOGY; TRANSIENTS; TRANSPORT THEORY; TRAPPING

Citation Formats

Sibatov, R. T., E-mail: ren-sib@bk.ru, and Morozova, E. V., E-mail: kat-valezhanina@yandex.ru. Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors. United States: N. p., 2015. Web. doi:10.1134/S106377611504024X.
Sibatov, R. T., E-mail: ren-sib@bk.ru, & Morozova, E. V., E-mail: kat-valezhanina@yandex.ru. Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors. United States. doi:10.1134/S106377611504024X.
Sibatov, R. T., E-mail: ren-sib@bk.ru, and Morozova, E. V., E-mail: kat-valezhanina@yandex.ru. Fri . "Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors". United States. doi:10.1134/S106377611504024X.
@article{osti_22472259,
title = {Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors},
author = {Sibatov, R. T., E-mail: ren-sib@bk.ru and Morozova, E. V., E-mail: kat-valezhanina@yandex.ru},
abstractNote = {A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors.},
doi = {10.1134/S106377611504024X},
journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 5,
volume = 120,
place = {United States},
year = {2015},
month = {5}
}