Investigation of local tunneling current noise spectra on the silicon crystal surfaces by means of STM/STS
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Moscow State University, Department of Physics (Russian Federation)
- Chinese Academy of Sciences, Wuhan Institute of Physics and Mathematics (China)
We report on a careful analysis of the local tunneling conductivity by means of ultra-high vacuum scanning tunneling microscopy/spectroscopy (STM/STS) technique in the vicinity of low-dimensional structures on the Si(111)–(7 × 7) and Si(110)–(16 × 2) surfaces. The power-law exponent α of low-frequency tunneling current noise spectra is investigated for different values of the tunneling contact parameters: relaxation rates, the localized state coupling, and the tunneling barrier width and height.
- OSTI ID:
- 22472129
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 121, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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