Photoluminescence of heterostructures with GaP{sub 1−x}N{sub x} and GaP{sub 1−x−y}N{sub x}As{sub y} layers grown on GaP and Si substrates by molecular-beam epitaxy

Journal Article · Wed Apr 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615040144· OSTI ID:22469983

Nikitina, E. V.; Sobolev, M. S.; Pirogov, E. V.; Denisov, D. V.; Egorov, A. Yu. ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation)

The structural and optical properties of heterostructures containing GaP{sub 1−x}N{sub x} ternary and GaP{sub 1−x−y}N{sub x}As{sub y} quaternary alloy layers are discussed. The heterostructures are grown by molecular-beam epitaxy on GaP and Si substrates. The structures are studied by the high-resolution X-ray diffraction technique and photoluminescence measurements in a wide temperature range from 10 to 300 K. In the low-temperature photoluminescence spectra of the alloys with a low nitrogen fraction (x < 0.007), two clearly resolved narrow lines attributed to the localized states of nitrogen pairs and the phonon replicas of these lines are observed.

• OSTI ID: 22469983
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CONCENTRATION RATIO
EMISSION SPECTRA
GALLIUM ARSENIDES
GALLIUM NITRIDES
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
QUATERNARY ALLOY SYSTEMS
SILICON
SUBSTRATES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
YTTRIUM NITRIDES