Photoluminescence of heterostructures with GaP{sub 1−x}N{sub x} and GaP{sub 1−x−y}N{sub x}As{sub y} layers grown on GaP and Si substrates by molecular-beam epitaxy
- Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation)
The structural and optical properties of heterostructures containing GaP{sub 1−x}N{sub x} ternary and GaP{sub 1−x−y}N{sub x}As{sub y} quaternary alloy layers are discussed. The heterostructures are grown by molecular-beam epitaxy on GaP and Si substrates. The structures are studied by the high-resolution X-ray diffraction technique and photoluminescence measurements in a wide temperature range from 10 to 300 K. In the low-temperature photoluminescence spectra of the alloys with a low nitrogen fraction (x < 0.007), two clearly resolved narrow lines attributed to the localized states of nitrogen pairs and the phonon replicas of these lines are observed.
- OSTI ID:
- 22469983
- Journal Information:
- Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CONCENTRATION RATIO
EMISSION SPECTRA
GALLIUM ARSENIDES
GALLIUM NITRIDES
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
QUATERNARY ALLOY SYSTEMS
SILICON
SUBSTRATES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
YTTRIUM NITRIDES
ABSORPTION SPECTROSCOPY
CONCENTRATION RATIO
EMISSION SPECTRA
GALLIUM ARSENIDES
GALLIUM NITRIDES
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
QUATERNARY ALLOY SYSTEMS
SILICON
SUBSTRATES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
YTTRIUM NITRIDES