Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga{sub x}In{sub 1-x}As{sub y}P{sub 1-y}/GaInP/GaAs(001) heterostructures
- Voronezh State University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga{sub x}In{sub 1-x}As{sub y}P{sub 1-y} quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the CuK{sub {alpha}}{sub 1,2} line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard's law and the Kouphal equation.
- OSTI ID:
- 21255617
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 42; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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