Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga{sub x}In{sub 1-x}As{sub y}P{sub 1-y}/GaInP/GaAs(001) heterostructures

Journal Article · · Semiconductors
; ; ; ;  [1]; ;  [2]
  1. Voronezh State University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga{sub x}In{sub 1-x}As{sub y}P{sub 1-y} quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the CuK{sub {alpha}}{sub 1,2} line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard's law and the Kouphal equation.
OSTI ID:
21255617
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 42; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English