On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615060068· OSTI ID:22469901

Boiko, V. M. ^[1]; Ermakov, V. S.; Kolin, N. G.; Korulin, A. V. ^[1]

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1. Obninsk Branch, Karpov Institute of Physical Chemistry (Russian Federation)

The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 10{sup 18} cm{sup −2} are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p{sub lim} = (5−6) × 10{sup 18} cm{sup −3} and in pinning of the Fermi level at the limiting position F{sub lim} close to E{sub V} + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.

• OSTI ID: 22469901
• Journal Information: Semiconductors, Vol. 49, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CONCENTRATION RATIO
CRYSTALS
EV RANGE
FERMI LEVEL
GALLIUM ANTIMONIDES
HOLES
IRRADIATION
MAGNETIC FLUX
NEUTRON FLUENCE
P-TYPE CONDUCTORS
RADIATION EFFECTS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K