Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Journal Article · Mon Jun 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615060056· OSTI ID:22469893

Bochkareva, N. I.; Ivanov, A. M.; Klochkov, A. V. ^[1]; Kogotkov, V. S. ^[2]; Rebane, Yu. T. ^[1]; Virko, M. V. ^[2]

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1. Ioffe Physical-Technical Institute Russian Academy of Sciences (Russian Federation)
2. St. Petersburg State Polytechnical University (Russian Federation)

It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hopping transport via defect states across the n-type part of the space-charge region results in limitation of the current by the tunneling resistance at intermediate currents and shunting of the n-type barrier at high currents. The increase in the average number of tunneling electrons suppresses the 1/f current noise at intermediate currents. The strong growth in the density of current noise at high currents, S{sub J} ∝ J{sup 3}, is attributed to a decrease in the average number of tunneling electrons as the n-type barrier decreases in height and width with increasing forward bias. The tunneling-recombination leakage current along extended defects grows faster than the tunneling injection current, which leads to emission efficiency droop.

• OSTI ID: 22469893
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
BYPASSES
DENSITY
ELECTRONS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LEAKAGE CURRENT
LIGHT EMITTING DIODES
N-TYPE CONDUCTORS
PHOTON EMISSION
QUANTUM WELLS
RECOMBINATION
SPACE CHARGE
TUNNEL EFFECT