Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sup x}:H (0 < x < 2)

Journal Article · Wed Jul 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615070222· OSTI ID:22469844

Terukov, E. I. ^[1]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO{sup 2}) and amorphous (a-SiO{sup x}:H) matrices are reviewed. The effect of radio-fre- quency (RF) and direct-current (dc) discharge modulation on the growth kinetics of ncl-Si is considered. The results of infrared spectroscopy, mass spectrometry, and laser-beam scanning of the plasma composition are analyzed. The behavior of nanoparticles is described depending on their charge and size in plasma under the effect of electric, magnetic, and gravity forces and under the influence of the dynamics of gases contained within the plasma. Infrared spectroscopy data on the a-SiO{sup x}:H film matrix are analyzed. The photoluminescence properties of ncl-Si fabricated using different techniques are described.

• OSTI ID: 22469844
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
DIRECT CURRENT
ELECTRIC DISCHARGES
FILMS
GRAVITATION
HYDROGENATION
INFRARED SPECTRA
LASER RADIATION
MASS SPECTROSCOPY
MATRIX MATERIALS
MODULATION
NANOPARTICLES
NANOSTRUCTURES
PHOTOLUMINESCENCE
PLASMA
SILICON
SILICON OXIDES