Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

Journal Article · Thu Oct 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615100243· OSTI ID:22469721

Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L. ^[1]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.

• OSTI ID: 22469721
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
DENSITY OF STATES
ELECTROLUMINESCENCE
ELECTRONS
EMISSION SPECTRA
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
LANTHANUM SELENIDES
LAYERS
PHONONS
POLARIZATION
POLARONS
QUANTUM DOTS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SUPERLATTICES
THRESHOLD CURRENT
TRANSMISSION ELECTRON MICROSCOPY