Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615100073· OSTI ID:22469712

Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V. ^[1]; Berezovskaya, T. N. ^[2]; Nevedomskiy, V. N. ^[1]

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1. Ioffe Institute (Russian Federation)
2. Russian Academy of Sciences, Saint Petersburg National Research Academic University (Russian Federation)

It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

• OSTI ID: 22469712
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BRAGG REFLECTION
FABRICATION
GALLIUM ARSENIDES
LASER CAVITIES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR JUNCTIONS
SUBSTRATES
SURFACES
TUNNEL EFFECT