Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4916268· OSTI ID:22454481

Guo, Yao; Liang, Meng; Fu, Jiajia; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Junxi; Wang, Guohong; Li, Jinmin ^[1]

---

1. R and D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083 (China)

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm{sup 2}.

• OSTI ID: 22454481
• Journal Information: AIP Advances, Vol. 5, Issue 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
CURRENT DENSITY
DEPLETION LAYER
DISTRIBUTION
EFFICIENCY
ELECTRONS
GALLIUM NITRIDES
LIGHT EMITTING DIODES
QUANTUM WELLS