Monte Carlo analysis of transient electron transport in wurtzite Zn{sub 1−x}Mg{sub x}O combined with first principles calculations
- State Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi’an 710071 (China)
- Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071 (China)
- School of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071 (China)
- School of Information Science and Technology, Northwest University, Xi’an 710127 (China)
Transient characteristics of wurtzite Zn{sub 1−x}Mg{sub x}O are investigated using a three-valley Ensemble Monte Carlo model verified by the agreement between the simulated low-field mobility and the experiment result reported. The electronic structures are obtained by first principles calculations with density functional theory. The results show that the peak electron drift velocities of Zn{sub 1−x}Mg{sub x}O (x = 11.1%, 16.7%, 19.4%, 25%) at 3000 kV/cm are 3.735 × 10{sup 7}, 2.133 × 10{sup 7}, 1.889 × 10{sup 7}, 1.295 × 10{sup 7} cm/s, respectively. With the increase of Mg concentration, a higher electric field is required for the onset of velocity overshoot. When the applied field exceeds 2000 kV/cm and 2500 kV/cm, a phenomena of velocity undershoot is observed in Zn{sub 0.889}Mg{sub 0.111}O and Zn{sub 0.833}Mg{sub 0.167}O respectively, while it is not observed for Zn{sub 0.806}Mg{sub 0.194}O and Zn{sub 0.75}Mg{sub 0.25}O even at 3000 kV/cm which is especially important for high frequency devices.
- OSTI ID:
- 22454436
- Journal Information:
- AIP Advances, Vol. 5, Issue 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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