Dielectric properties of c-axis oriented Zn{sub 1-x}Mg{sub x}O thin films grown by multimagnetron sputtering

Journal Article · Mon Aug 21 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2266891· OSTI ID:20883183

Dhananjay,; Krupanidhi, S B ^[1]

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1. Department of Instrumentation, Indian Institute of Science, Bangalore 560012 (India)

Zn{sub 1-x}Mg{sub x}O (x=0.3) thin films have been fabricated on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn{sub 1-x}Mg{sub x}O films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 deg. C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn{sub 1-x}Mg{sub x}O thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 {mu}C/cm{sup 2} and coercive field of 8 kV/cm at room temperature.

• OSTI ID: 20883183
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CURIE POINT
ELECTRIC CONDUCTIVITY
FERROELECTRIC MATERIALS
GRAIN ORIENTATION
HYSTERESIS
MAGNESIUM OXIDES
PERMITTIVITY
PLATINUM
POLARIZATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANIUM OXIDES
ZINC COMPOUNDS