Mg dopant in Cu{sub 2}SnSe{sub 3}: An n-type former and a promoter of electrical mobility up to 387 cm{sup 2} V{sup −1} s{sup −1}
Mg-doped Cu{sub 2}SnSe{sub 3} bulk materials with the (Cu{sub 2−x}Mg{sub x})SnSe{sub 3} (Mg-x-CTSe) formula at x=0, 0.05, 0.1, 0.15, and 0.2 were prepared at 550 °C for 2 h with soluble sintering aids of Sb{sub 2}S{sub 3} and Te. Defect chemistry was studied by measuring structural and electrical properties of Mg-doped Cu{sub 2}SnSe{sub 3} as a function of dopant concentration. Mg-x-CTSe pellets show p-type at x=0, 0.05 and 0.1 and n-type at x=0.15 and 0.2. The low hole concentration of 3.2×10{sup 17} cm{sup −3} and high mobility of 387 cm{sup 2} V{sup −1} s{sup −1} were obtained for (Cu{sub 2−x}Mg{sub x})SnSe{sub 3} bulks at x=0.1 (5% Mg) as compared to 2.2×10{sup 18} cm{sup −3} and 91 cm{sup 2} V{sup −1} s{sup −1} for the undoped one. The explanation based upon the Mg-to-Cu antisite donor defect for the changes in electrical property was declared. A high Mg content for Mg-x-CTSe at x≥0.1 can lead to the formation of second phases. The study in bulk Mg-x-CTSe has been based upon defect states and is consistent and supported by the data of structural and electrical properties. - Graphical abstract: The effects of extrinsic doping of Mg{sup 2+} on the electrical properties of Cu{sub 2}SnSe{sub 3} bulks. - Highlights: • p-Type Mg-CTSe with n{sub p} of 3.2×10{sup 17} cm{sup −3} and μ{sub p} of 387 cm{sup 2} V{sup −1} s{sup −1} was obtained. • This p-type occurred for 5%Mg-doped CTSe with the (Cu{sub 1.9}Mg{sub 0.1})SnSe{sub 3} formula. • Mg dopant acts as a donor to lower n{sub p} and an accelerator to increase mobility. • High Mg content leads to the p-to-n transitions. • Defect was explored by measuring electrical property and lattice parameter.
- OSTI ID:
- 22443409
- Journal Information:
- Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Vol. 218; ISSN 0022-4596; ISSN JSSCBI
- Country of Publication:
- United States
- Language:
- English
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