Mg dopant in Cu{sub 2}ZnSnSe{sub 4}: An n-type former and a promoter of electrical mobility up to 120 cm{sup 2} V{sup −1} s{sup −1}
Mg-doped Cu{sub 2}ZnSnSe{sub 4} (CZTSe) bulk materials with the (Cu{sub 2−x}Mg{sub x})ZnSnSe{sub 4} formula at x=0, 0.1, 0.2, 0.3, and 0.4 were prepared at 600 °C for 2 h with soluble sintering aids of Sb{sub 2}S{sub 3} and Te. Defect chemistry was studied by measuring structural and electrical properties of Mg-doped CZTSe as a function of dopant concentration. Except at x=0, all Mg-doped CZTSe pellets showed an n-type behavior. The Mg-doped CZTSe pellets showed an n-type behavior. n-Type Mg-CZTSe pellets at x=0.1 showed the highest electrical conductivity of 24.6 S cm{sup −1} and the net hole mobility of 120 cm{sup 2} V{sup −1} s{sup −1}, while they were 11.8 S cm{sup −1} and 36.5 cm{sup 2} V{sup −1} s{sup −1} for the undoped p-type CZTSe. Mg dopant is a strong promoter of electrical mobility. Mg dopant behaves as a donor defect in CZTSe at a 5% doping content, but is also used as an acceptor at a high content above 5%. Mg doping has further developed CZTSe into a promising semiconductor. - Graphical abstract: The effects of extrinsic doping of Mg{sup 2+} on the electrical properties of Cu{sub 2}ZnSnSe{sub 4} bulks. - Highlights: • (Cu{sub 2−x}Mg{sub x})ZnSnSe{sub 4} bulks were fabricated by liquid-phase sintering at 600 °C. • All Mg-x-CZTSe pellets except at x=0 exhibited n-type conductivity. • Electrical properties of CZTSe pellets changed with the Cu and Mg ratios. • Mg{sup 2+} goes to the Cu{sup 1+} site to form the Mg{sub Cu}{sup 1+} donor defect for the n-type CZTSe. • n-Type Mg-0.1-CZTSe bulk with 5% Mg showed the highest mobility of 120 cm{sup 2} V{sup −1} s{sup −1}.
- OSTI ID:
- 22334270
- Journal Information:
- Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Vol. 215; ISSN 0022-4596; ISSN JSSCBI
- Country of Publication:
- United States
- Language:
- English
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