Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Journal Article · Wed Oct 15 00:00:00 EDT 2014 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.04.047· OSTI ID:22420587

Do, Woori ^[1]; Jin, Won-Beom ^[2]; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June ^[1]; Kim, Byung-Kuk ^[3]; Park, Seungho ^[2]; Hwang, Jin-Ha ^[1]

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1. Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)
2. Department of Mechanical and Systems Design Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)
3. Viatron Technologies, Kyeonggi-Do 441-811 (Korea, Republic of)

Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

• OSTI ID: 22420587
• Journal Information: Materials Research Bulletin, Vol. 58; Conference: IFFM2013: International forum on functional materials, Jeju City (Korea, Republic of), 27-29 Jun 2013; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON
BORON IONS
GLASS
HALL EFFECT
ION IMPLANTATION
IRRADIATION
LIGHT BULBS
POLYCRYSTALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
VISIBLE RADIATION