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Title: Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffraction

Abstract

The thermal transport properties of crystalline nanostructures on Si were studied by ultra-fast surface sensitive time-resolved electron diffraction. Self-organized growth of epitaxial Ge hut, dome, and relaxed clusters was achieved by in-situ deposition of 8 monolayers of Ge on Si(001) at 550 °C under UHV conditions. The thermal response of the three different cluster types subsequent to impulsive heating by fs laser pulses was determined through the Debye-Waller effect. Time resolved spot profile analysis and life-time mapping was employed to distinguish between the thermal response of the different cluster types. While dome clusters are cooling with a time constant of τ = 150 ps, which agrees well with numerical simulations, the smaller hut clusters with a height of 2.3 nm exhibit a cooling time constant of τ = 50 ps, which is a factor of 1.4 slower than expected.

Authors:
; ; ; ;  [1]
  1. Department of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg (Germany)
Publication Date:
OSTI Identifier:
22420265
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPUTERIZED SIMULATION; COOLING TIME; DEBYE-WALLER FACTOR; ELECTRON DIFFRACTION; EPITAXY; GERMANIUM; HEAT TRANSFER; LASERS; NANOSTRUCTURES; SILICON; TIME RESOLUTION

Citation Formats

Frigge, T., E-mail: tim.frigge@uni-due.de, Hafke, B., Tinnemann, V., Krenzer, B., and Horn-von Hoegen, M.. Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffraction. United States: N. p., 2015. Web. doi:10.1063/1.4907636.
Frigge, T., E-mail: tim.frigge@uni-due.de, Hafke, B., Tinnemann, V., Krenzer, B., & Horn-von Hoegen, M.. Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffraction. United States. doi:10.1063/1.4907636.
Frigge, T., E-mail: tim.frigge@uni-due.de, Hafke, B., Tinnemann, V., Krenzer, B., and Horn-von Hoegen, M.. Mon . "Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffraction". United States. doi:10.1063/1.4907636.
@article{osti_22420265,
title = {Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffraction},
author = {Frigge, T., E-mail: tim.frigge@uni-due.de and Hafke, B. and Tinnemann, V. and Krenzer, B. and Horn-von Hoegen, M.},
abstractNote = {The thermal transport properties of crystalline nanostructures on Si were studied by ultra-fast surface sensitive time-resolved electron diffraction. Self-organized growth of epitaxial Ge hut, dome, and relaxed clusters was achieved by in-situ deposition of 8 monolayers of Ge on Si(001) at 550 °C under UHV conditions. The thermal response of the three different cluster types subsequent to impulsive heating by fs laser pulses was determined through the Debye-Waller effect. Time resolved spot profile analysis and life-time mapping was employed to distinguish between the thermal response of the different cluster types. While dome clusters are cooling with a time constant of τ = 150 ps, which agrees well with numerical simulations, the smaller hut clusters with a height of 2.3 nm exhibit a cooling time constant of τ = 50 ps, which is a factor of 1.4 slower than expected.},
doi = {10.1063/1.4907636},
journal = {Applied Physics Letters},
number = 5,
volume = 106,
place = {United States},
year = {Mon Feb 02 00:00:00 EST 2015},
month = {Mon Feb 02 00:00:00 EST 2015}
}