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Title: Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films

Abstract

We present an extended X-ray absorption fine structure investigation of the local environment of Sn atoms in strained and relaxed Ge{sub 1−x}Sn{sub x} layers with different compositions. We show that the preferred configuration for the incorporation of Sn atoms in these Ge{sub 1−x}Sn{sub x} layers is that of a α-Sn defect, with each Sn atom covalently bonded to four Ge atoms in a classic tetrahedral configuration. Sn interstitials, Sn-split vacancy complexes, or Sn dimers, if present at all, are not expected to involve more than 2.5% of the total Sn atoms. This finding, along with a relative increase of Sn atoms in the second atomic shell around a central Sn atom in Ge{sub 1−x}Sn{sub x} layers with increasing Sn concentrations, suggests that the investigated materials are homogeneous random substitutional alloys. Within the accuracy of the measurements, the degree of strain relaxation of the Ge{sub 1−x}Sn{sub x} layers does not have a significant impact on the local atomic surrounding of the Sn atoms. Finally, the calculated topological rigidity parameter a** = 0.69 ± 0.29 indicates that the strain due to alloying in Ge{sub 1−x}Sn{sub x} is accommodated via bond stretching and bond bending, with a slight predominance of the latter, in agreement with ab initiomore » calculations reported in literature.« less

Authors:
;  [1];  [2];  [3]; ;  [1];  [2]; ;  [1];  [4]; ;  [5]
  1. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (Belgium)
  3. Laboratory for Solid State Physics and Magnetism, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
  4. Dutch-Belgian Beamline (DUBBLE), ESRF - The European Synchrotron, CS 40220, 38043 Grenoble (France)
  5. Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22413232
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ATOMS; CONCENTRATION RATIO; COVALENCE; DIMERS; ELECTRONIC STRUCTURE; EPITAXY; FILMS; FINE STRUCTURE; GERMANIUM; INTERSTITIALS; LAYERS; RELAXATION; STRAINS; TIN; VACANCIES; X RADIATION

Citation Formats

Gencarelli, F., E-mail: federica.gencarelli@imec.be, Heyns, M., Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Grandjean, D., Shimura, Y., Vandervorst, W., Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Vincent, B., Loo, R., Banerjee, D., Vantomme, A., and Temst, K.. Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films. United States: N. p., 2015. Web. doi:10.1063/1.4913856.
Gencarelli, F., E-mail: federica.gencarelli@imec.be, Heyns, M., Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Grandjean, D., Shimura, Y., Vandervorst, W., Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Vincent, B., Loo, R., Banerjee, D., Vantomme, A., & Temst, K.. Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films. United States. doi:10.1063/1.4913856.
Gencarelli, F., E-mail: federica.gencarelli@imec.be, Heyns, M., Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Grandjean, D., Shimura, Y., Vandervorst, W., Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Vincent, B., Loo, R., Banerjee, D., Vantomme, A., and Temst, K.. Sat . "Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films". United States. doi:10.1063/1.4913856.
@article{osti_22413232,
title = {Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films},
author = {Gencarelli, F., E-mail: federica.gencarelli@imec.be and Heyns, M. and Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, B-3001 Leuven and Grandjean, D. and Shimura, Y. and Vandervorst, W. and Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven and Vincent, B. and Loo, R. and Banerjee, D. and Vantomme, A. and Temst, K.},
abstractNote = {We present an extended X-ray absorption fine structure investigation of the local environment of Sn atoms in strained and relaxed Ge{sub 1−x}Sn{sub x} layers with different compositions. We show that the preferred configuration for the incorporation of Sn atoms in these Ge{sub 1−x}Sn{sub x} layers is that of a α-Sn defect, with each Sn atom covalently bonded to four Ge atoms in a classic tetrahedral configuration. Sn interstitials, Sn-split vacancy complexes, or Sn dimers, if present at all, are not expected to involve more than 2.5% of the total Sn atoms. This finding, along with a relative increase of Sn atoms in the second atomic shell around a central Sn atom in Ge{sub 1−x}Sn{sub x} layers with increasing Sn concentrations, suggests that the investigated materials are homogeneous random substitutional alloys. Within the accuracy of the measurements, the degree of strain relaxation of the Ge{sub 1−x}Sn{sub x} layers does not have a significant impact on the local atomic surrounding of the Sn atoms. Finally, the calculated topological rigidity parameter a** = 0.69 ± 0.29 indicates that the strain due to alloying in Ge{sub 1−x}Sn{sub x} is accommodated via bond stretching and bond bending, with a slight predominance of the latter, in agreement with ab initio calculations reported in literature.},
doi = {10.1063/1.4913856},
journal = {Journal of Applied Physics},
number = 9,
volume = 117,
place = {United States},
year = {Sat Mar 07 00:00:00 EST 2015},
month = {Sat Mar 07 00:00:00 EST 2015}
}