Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Lentz, J. Zach; Woicik, J. C.; Bergschneider, Matthew; Davis, Ryan; Mehta, Apurva; Cho, Kyeongjae; McIntyre, Paul C.

doi:10.1063/5.0136746

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Journal Article · Tue Feb 07 00:00:00 EST 2023 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0136746· OSTI ID:1970162

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Stanford University, CA (United States); University of Arkansas
National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States)
University of Texas at Dallas, Richardson, TX (United States)
SLAC National Accelerator Laboratory, Menlo Park, CA (United States)
Stanford University, CA (United States); SLAC National Accelerator Laboratory, Menlo Park, CA (United States)

Short-range atomic order in semiconductor alloys is a relatively unexplored topic that may promote design of new materials with unexpected properties. Here, local atomic ordering is investigated in Ge–Sn alloys, a group-IV system that is attractive for its enhanced optoelectronic properties achievable via a direct gap for Sn concentrations exceeding ≈10 at. %. The substantial misfit strain imposed on Ge–Sn thin films during growth on bulk Si or Ge substrates can induce defect formation; however, misfit strain can be accommodated by growing Ge–Sn alloy films on Ge nanowires, which effectively act as elastically compliant substrates. In this work, Ge core/Ge_1–xSn_x (x ≈ 0.1) shell nanowires were characterized with extended x-ray absorption fine structure (EXAFS) to elucidate their local atomic environment. Simultaneous fitting of high-quality EXAFS data collected at both the Ge K-edge and the Sn K-edge reveals a large (≈ 40%) deficiency of Sn in the first coordination shell around a Sn atom relative to a random alloy, thereby providing the first direct experimental evidence of significant short-range order in this semiconductor alloy system. Furthermore, comparison of path length data from the EXAFS measurements with density functional theory simulations provides alloy atomic structures consistent with this conclusion.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); University of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: U.S. National Science Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Office of Workforce Development for Teachers & Scientists (WDTS)

Grant/Contract Number:: AC02-76SF00515; SC0014664; SC0023412

OSTI ID:: 1970162

Alternate ID(s):: OSTI ID: 1993515

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 122; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

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