skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of lithium doping on microstructure, electrical properties, and chemical bonds of sol-gel derived NKN thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4913708· OSTI ID:22413186
 [1]; ;  [1];  [1];  [2];  [3]
  1. Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
  2. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China)
  3. Department of Digital Game and Animation Design, Tung-Fang Design University, Kaohsiung 829, Taiwan (China)

Highly (100/110) oriented lead-free Li{sub x}(Na{sub 0.5}K{sub 0.5}){sub 1−x}NbO{sub 3} (LNKN, x = 0, 0.02, 0.04, and 0.06) thin films are fabricated on Pt/Ti/SiO{sub 2}/Si substrates via a sol-gel processing method. The lithium (Li) dopants modify the microstructure and chemical bonds of the LNKN films, and therefore improve their electrical properties. The optimal values of the remnant polarization (P{sub r} = 14.3 μC/cm{sup 2}), piezoelectric coefficient (d{sub 33} = 48.1 pm/V), and leakage current (<10{sup −5} A/cm{sup 2}) are obtained for a lithium addition of x = 0.04 (i.e., 4 at. %). The observation results suggest that the superior electrical properties are the result of an improved crystallization, a larger grain size, and a smoother surface morphology. It is shown that the ion transport mechanism is dominated by an Ohmic behavior under low electric fields and the Poole-Frenkel emission effect under high electric fields.

OSTI ID:
22413186
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English