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Title: Dielectric and piezoelectric properties of (x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-- (1-x)Pb(Zr{sub 1/2}Ti{sub 1/2})O{sub 3} thin films prepared by the sol--gel method

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1388572· OSTI ID:40230565

The dielectric and piezoelectric properties of sol--gel derived (x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}--(1-x)Pb(Zr{sub 1/2}Ti{sub 1/2})O{sub 3}[(x)PMN--(1-x)PZT] thin films were investigated as a function of PMN content (x=0--1). For all compositions in the (x)PMN--(1-x)PZT thin films, a well-developed perovskite phase with (111) preferred orientation was obtained at the annealing temperature range of 700--800{sup o}C. With increasing PMN content, the dielectric constant increased, while the remnant polarization and coercive field decreased. The enhanced dielectric properties were shown in the region of x=0.2. At this composition, the dielectric constant and remnant polarization were 1750 and 12.75 {mu}C/cm{sup 2}, respectively, which indicate that the morphotropic phase boundary (MPB) exists near the composition of x=0.2. The transverse piezoelectric coefficient (d{sub 31}) showed a maximum value of -84 pC/N at x=0.2. These results confirmed that enhancement of the dielectric constant and remnant polarization improved the piezoelectric properties at the MPB. {copyright} 2001 American Institute of Physics.

Sponsoring Organization:
(US)
OSTI ID:
40230565
Journal Information:
Journal of Applied Physics, Vol. 90, Issue 4; Other Information: DOI: 10.1063/1.1388572; Othernumber: JAPIAU000090000004001968000001; 028117JAP; PBD: 15 Aug 2001; ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English