Dielectric and piezoelectric properties of (x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-- (1-x)Pb(Zr{sub 1/2}Ti{sub 1/2})O{sub 3} thin films prepared by the sol--gel method
The dielectric and piezoelectric properties of sol--gel derived (x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}--(1-x)Pb(Zr{sub 1/2}Ti{sub 1/2})O{sub 3}[(x)PMN--(1-x)PZT] thin films were investigated as a function of PMN content (x=0--1). For all compositions in the (x)PMN--(1-x)PZT thin films, a well-developed perovskite phase with (111) preferred orientation was obtained at the annealing temperature range of 700--800{sup o}C. With increasing PMN content, the dielectric constant increased, while the remnant polarization and coercive field decreased. The enhanced dielectric properties were shown in the region of x=0.2. At this composition, the dielectric constant and remnant polarization were 1750 and 12.75 {mu}C/cm{sup 2}, respectively, which indicate that the morphotropic phase boundary (MPB) exists near the composition of x=0.2. The transverse piezoelectric coefficient (d{sub 31}) showed a maximum value of -84 pC/N at x=0.2. These results confirmed that enhancement of the dielectric constant and remnant polarization improved the piezoelectric properties at the MPB. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230565
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 90; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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