Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions

Journal Article · Sun Jun 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4922425· OSTI ID:22412936

Devi, Vanita; Kumar, Ravindra; Kumar, Manish; Choudhary, R. J.; Phase, D. M. ^[1]

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1. UGC-DAE Consortium for Scientific Research, Indore 452001 (India)

The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.

• OSTI ID: 22412936
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
COMPARATIVE EVALUATIONS
ELECTRIC CONTACTS
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY BEAM DEPOSITION
ENERGY GAP
HETEROJUNCTIONS
INTERFACES
LASER RADIATION
OPTOELECTRONIC DEVICES
PULSED IRRADIATION
VALENCE
ZINC OXIDES