Band offset at the heterojunction interfaces of CdS/ZnSnP{sub 2}, ZnS/ZnSnP{sub 2}, and In{sub 2}S{sub 3}/ZnSnP{sub 2}
- Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501 (Japan)
Heterojunctions were formed between ZnSnP{sub 2} and buffer materials, CdS, ZnS, and In{sub 2}S{sub 3}, using chemical bath deposition. The band offset was investigated by X-ray photoelectron spectroscopy based on Kraut method. The conduction band offset, ΔE{sub C}, between ZnSnP{sub 2} and CdS was estimated to be −1.2 eV, which significantly limits the open circuit voltage, V{sub OC}. Conversely, ΔE{sub C} at the heterojunction between ZnSnP{sub 2} and ZnS was +0.3 eV, which is within the optimal offset range. In the case of In{sub 2}S{sub 3}, ΔE{sub C} was a relatively small value, −0.2 eV, and In{sub 2}S{sub 3} is potentially useful as a buffer layer in ZnSnP{sub 2} solar cells. The J−V characteristics of heterojunction diodes with an Al/sulfides/ZnSnP{sub 2} bulk/Mo structure also suggested that ZnS and In{sub 2}S{sub 3} are promising candidates for buffer layers in ZnSnP{sub 2} thin film solar cells, and the band alignment is a key factor for the higher efficiency of solar cells with heterojunctions.
- OSTI ID:
- 22596699
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 19; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALIGNMENT
BUFFERS
CADMIUM SULFIDES
ELECTRIC POTENTIAL
HETEROJUNCTIONS
INDIUM SULFIDES
LAYERS
SOLAR CELLS
THIN FILMS
TIN PHOSPHATES
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC PHOSPHATES
ZINC SULFIDES