Theoretical study of phosphorene tunneling field effect transistors

Journal Article · Mon Feb 23 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913842· OSTI ID:22412728

Chang, Jiwon; Hobbs, Chris ^[1]

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1. SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

• OSTI ID: 22412728
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
BENCHMARKS
EFFECTIVE MASS
ELECTRIC CURRENTS
ENERGY GAP
FIELD EFFECT TRANSISTORS
LEAKAGE CURRENT
MOLYBDENUM TELLURIDES
PERFORMANCE
PHOSPHORUS
TUNNEL EFFECT
TWO-DIMENSIONAL SYSTEMS