Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Luisier, Mathieu; Klimeck, Gerhard

doi:10.1063/1.3140505

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Journal Article · Tue Jun 02 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3140505· OSTI ID:1564655

Luisier, Mathieu ^[1]; Klimeck, Gerhard ^[1]

Purdue Univ., West Lafayette, IN (United States). Network of Computational Nanotechnology and Birck Nanotechnology Center

Using a three-dimensional, atomistic quantum transport simulator based on the tight-binding method, we investigate statistical samples of single-gate graphene nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different line edge roughness probabilities. We find that as the nanoribbon edges become rougher, the device OFF-current drastically increases due to a reduction of the graphene band gap and an enhancement of source-to-drain tunneling leakage through the gate potential barrier. At the same time, the ON-current remains almost constant. Furthermore, this leads to a deterioration of the transistor subthreshold slopes and to unacceptably low ON/OFF current ratios limiting the switching performances of GNR TFETs.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)

Sponsoring Organization:: USDOE Office of Science (SC)

OSTI ID:: 1564655

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 94; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (13)

Drive current boosting of n-type tunnel FET with strained SiGe layer at source Patel, Nayan; Ramesha, A.; Mahapatra, Santanu Microelectronics Journal, Vol. 39, Issue 12 https://doi.org/10.1016/j.mejo.2008.02.020	journal	December 2008
Computational Study of Tunneling Transistor Based on Graphene Nanoribbon Zhao, Pei; Chauhan, Jyotsna; Guo, Jing Nano Letters, Vol. 9, Issue 2 https://doi.org/10.1021/nl803176x	journal	February 2009
Effect of edge roughness in graphene nanoribbon transistors Yoon, Youngki; Guo, Jing Applied Physics Letters, Vol. 91, Issue 7 https://doi.org/10.1063/1.2769764	journal	August 2007
Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors Basu, D.; Gilbert, M. J.; Register, L. F. Applied Physics Letters, Vol. 92, Issue 4 https://doi.org/10.1063/1.2839330	journal	January 2008
Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions Jena, Debdeep; Fang, Tian; Zhang, Qin Applied Physics Letters, Vol. 93, Issue 11 https://doi.org/10.1063/1.2983744	journal	September 2008
Atomistic simulation of nanowires in the s p 3 d 5 s * tight-binding formalism: From boundary conditions to strain calculations Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang Physical Review B, Vol. 74, Issue 20 https://doi.org/10.1103/PhysRevB.74.205323	journal	November 2006
Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with a Si ∕ Ge tight-binding parameterization Boykin, Timothy B.; Kharche, Neerav; Klimeck, Gerhard Physical Review B, Vol. 76, Issue 3 https://doi.org/10.1103/PhysRevB.76.035310	journal	July 2007
Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors Wang, Xinran; Ouyang, Yijian; Li, Xiaolin Physical Review Letters, Vol. 100, Issue 20 https://doi.org/10.1103/PhysRevLett.100.206803	journal	May 2008
Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors Appenzeller, J.; Lin, Y. -M.; Knoch, J. Physical Review Letters, Vol. 93, Issue 19 https://doi.org/10.1103/PhysRevLett.93.196805	journal	November 2004
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec No authors listed IEEE Electron Device Letters, Vol. 28, Issue 8 https://doi.org/10.1109/LED.2007.901273	journal	August 2007
Simulation of Graphene Nanoribbon Field-Effect Transistors Fiori, G.; Iannaccone, G. IEEE Electron Device Letters, Vol. 28, Issue 8 https://doi.org/10.1109/LED.2007.901680	journal	August 2007
Graphene Nanoribbon Tunnel Transistors Zhang, Qin; Fang, Tian; Xing, Huili IEEE Electron Device Letters, Vol. 29, Issue 12 https://doi.org/10.1109/LED.2008.2005650	journal	December 2008
Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs No authors listed IEEE Transactions on Electron Devices, Vol. 55, Issue 9 https://doi.org/10.1109/TED.2008.928021	journal	September 2008

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Synthesis of Graphene and Its Applications: A Review Choi, Wonbong; Lahiri, Indranil; Seelaboyina, Raghunandan Critical Reviews in Solid State and Materials Sciences, Vol. 35, Issue 1 https://doi.org/10.1080/10408430903505036	journal	February 2010
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