Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Luisier, Mathieu; Klimeck, Gerhard

doi:10.1063/1.3140505

Title: Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Journal Article · Tue Jun 02 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3140505· OSTI ID:1564655

Luisier, Mathieu ^[1]; Klimeck, Gerhard ^[1]

Purdue Univ., West Lafayette, IN (United States). Network of Computational Nanotechnology and Birck Nanotechnology Center

Using a three-dimensional, atomistic quantum transport simulator based on the tight-binding method, we investigate statistical samples of single-gate graphene nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different line edge roughness probabilities. We find that as the nanoribbon edges become rougher, the device OFF-current drastically increases due to a reduction of the graphene band gap and an enhancement of source-to-drain tunneling leakage through the gate potential barrier. At the same time, the ON-current remains almost constant. Furthermore, this leads to a deterioration of the transistor subthreshold slopes and to unacceptably low ON/OFF current ratios limiting the switching performances of GNR TFETs.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)

Sponsoring Organization:: USDOE Office of Science (SC)

OSTI ID:: 1564655

Journal Information:: Applied Physics Letters, Vol. 94, Issue 22; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 75 works

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References (12)

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Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors Hwang, Wan Sik; Zhao, Pei; Kim, Sung Geun npj 2D Materials and Applications, Vol. 3, Issue 1 https://doi.org/10.1038/s41699-019-0127-1	journal	November 2019
Modeling of graphene nanoribbon devices Guo, Jing Nanoscale, Vol. 4, Issue 18 https://doi.org/10.1039/c2nr31437a	journal	January 2012
Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy Yang, Tao; Hertenberger, Simon; Morkötter, Stefanie Applied Physics Letters, Vol. 101, Issue 23 https://doi.org/10.1063/1.4768001	journal	December 2012
Synthesis of Graphene and Its Applications: A Review Choi, Wonbong; Lahiri, Indranil; Seelaboyina, Raghunandan Critical Reviews in Solid State and Materials Sciences, Vol. 35, Issue 1 https://doi.org/10.1080/10408430903505036	journal	February 2010
Design of carbon sources: starting point for chemical vapor deposition of graphene Yang, Jie; Hu, PingAn; Yu, Gui 2D Materials, Vol. 6, Issue 4 https://doi.org/10.1088/2053-1583/ab31bd	journal	July 2019
Two-dimensional materials for electronic applications Lemme, Max C.; Li, Lain-Jong; Palacios, Tomás MRS Bulletin, Vol. 39, Issue 8 https://doi.org/10.1557/mrs.2014.138	journal	August 2014
Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons Marconcini, Paolo; Cresti, Alessandro; Roche, Stephan Materials, Vol. 11, Issue 5 https://doi.org/10.3390/ma11050667	journal	April 2018
High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors Choi, Chang-Young; Lee, Ji-Hoon; Koh, Jung-Hyuk Nanoscale Research Letters, Vol. 5, Issue 11 https://doi.org/10.1007/s11671-010-9714-y	journal	August 2010
Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene Chen, Fan W.; Ilatikhameneh, Hesameddin; Ameen, Tarek A. IEEE Electron Device Letters, Vol. 38, Issue 1 https://doi.org/10.1109/led.2016.2627538	journal	January 2017
Graphene Transistors Tahy, Kristof; Fang, Tian; Zhao, Pei Physics and Applications of Graphene - Experiments https://doi.org/10.5772/14307	book	April 2011

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