Robustness of n-GaAs carrier spin properties to 5 MeV proton irradiation
- Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Physics, Western Michigan University, Kalamazoo, Michigan 49008 (United States)
Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade electronic properties. Encoding information as spin polarizations offers an attractive alternative to electronic logic that should be robust to randomly polarized transient radiation effects. As a preliminary step towards radiation-resistant spintronic devices, we measure the spin properties of n-GaAs as a function of radiation fluence using time-resolved Kerr rotation and photoluminescence spectroscopy. Our results show a modest to negligible change in the long-term electron spin properties up to a fluence of 1 × 10{sup 14} (5 MeV protons)/cm{sup 2}, even as the luminescence decreases by two orders of magnitude.
- OSTI ID:
- 22412657
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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