Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

Journal Article · Mon Feb 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4907638· OSTI ID:22412639

Stadelmann, T.; Grossmann, S.; Hoogerwerf, A. C.; Sulmoni, L.; Lamy, J. -M.; Grandjean, N. ^[1]

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1. Institute of Condensed Matter Physics (ICMP), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injected photons.

• OSTI ID: 22412639
• Journal Information: Applied Physics Letters, Vol. 106, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BLEACHING
GALLIUM NITRIDES
INDIUM COMPOUNDS
PEAK LOAD
PHOTONS
Q-SWITCHING
REACTION KINETICS
SEMICONDUCTOR LASERS
SOLITONS