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Metastable bcc phase formation in 3d ferromagnetic transition metal thin films sputter-deposited on GaAs(100) substrates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4913628· OSTI ID:22409934
; ;  [1];  [2];  [3]
  1. Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)
  2. Graduate School of Fine Arts, Tokyo University of the Arts, Taito-ku, Tokyo 110-8714 (Japan)
  3. Faculty of Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan)

Co{sub 100−x}Fe{sub x} and Ni{sub 100−y}Fe{sub y} (at. %, x = 0–30, y = 0–60) films of 10 nm thickness are prepared on GaAs(100) substrates at room temperature by using a radio-frequency magnetron sputtering system. The detailed growth behavior is investigated by in-situ reflection high-energy electron diffraction. (100)-oriented Co and Ni single-crystals with metastable bcc structure are formed in the early stage of film growth, where the metastable structure is stabilized through hetero-epitaxial growth. With increasing the thickness up to 2 nm, the Co and the Ni films start to transform into more stable hcp and fcc structures through atomic displacements parallel to bcc(110) slide planes, respectively. The stability of bcc phase is improved by adding a small volume of Fe atoms into a Co film. The critical thickness of bcc phase formation is thicker than 10 nm for Co{sub 100−x}Fe{sub x} films with x ≥ 10. On the contrary, the stability of bcc phase for Ni-Fe system is less than that for Co-Fe system. The critical thicknesses for Ni{sub 100−y}Fe{sub y} films with y = 20, 40, and 60 are 1, 3, and 5 nm, respectively. The Co{sub 100−x}Fe{sub x} single-crystal films with metastable bcc structure formed on GaAs(100) substrates show in-plane uniaxial magnetic anisotropies with the easy direction along GaAs[011], similar to the case of Fe film epitaxially grown on GaAs(100) substrate. A Co{sub 100−x}Fe{sub x} film with higher Fe content shows a higher saturation magnetization and a lower coercivity.

OSTI ID:
22409934
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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