Preparation and characterization of Co single-crystal thin films with hcp, fcc and bcc structures

Journal Article · Fri Apr 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3537817· OSTI ID:21560119

Ohtake, Mitsuru; Yabuhara, Osamu; Higuchi, Jumpei; Futamoto, Masaaki ^[1]

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1. Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

Co crystals with three different structures are realized in the form of single-crystal thin films hetero-epitaxially grown on single-crystal substrates by ultrahigh vacuum rf magnetron sputtering. hcp-, fcc-, and bcc-Co single-crystal films are formed on Cr(211){sub bcc}, Cu(100){sub fcc}, and GaAs(110){sub B3}, respectively. The film growth process is studied by RHEED, and the lattice constants of these Co films are determined by x-ray diffraction. The magnetization properties of these thin films are reflecting the magnetocrystalline anisotropies of Co crystals with the easy magnetization axes along hcp<0001>, fcc<111>, and bcc<100> directions.

• OSTI ID: 21560119
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3537817; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
BCC LATTICES
CHROMIUM
COBALT
COPPER
DEPOSITION
ELECTRON DIFFRACTION
EPITAXY
FCC LATTICES
GALLIUM ARSENIDES
HCP LATTICES
LATTICE PARAMETERS
LAYERS
MAGNETIZATION
MAGNETRONS
MONOCRYSTALS
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
CUBIC LATTICES
DIFFRACTION
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
HEXAGONAL LATTICES
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
PNICTIDES
SCATTERING
TRANSITION ELEMENTS