Temperature evolution of carrier dynamics in GaN{sub x}P{sub y}As{sub 1−y−x}alloys

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919751· OSTI ID:22403015

Baranowski, M.; Latkowska, M.; Misiewicz, J. ^[1]; Luce, A. V. ^[2]; Yu, K. M. ^[2]; Kuang, Y. J. ^[3]; Tu, C. W. ^[4]; Walukiewicz, W. ^[2]

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1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
3. Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)
4. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

The temperature dependence of carrier dynamics in GaN{sub x}As{sub 1−y}P{sub y} alloys has been investigated by time resolved photoluminescence. This investigation has shown that the decay time constant does not change significantly up to 100 K, and then starts to decrease rapidly above this temperature. Additionally, the decay times at the high-energy side of the spectrum decrease faster than those at the low-energy side. The effects have been explained by the interplay between carrier capture by radiative and nonradiative recombination centers. Detailed simulations show that the effect of carrier localization in the investigated materials is better described by double-scale potential fluctuations that are related to (i) distribution of localized states energy and (ii) bandgap fluctuations. In addition, it was observed that the increase in nitrogen concentration leads to a shorter decay time at room temperature, which is attributed to a larger concentration of non-radiative recombination centers. Furthermore, a post-growth annealing step leads to a longer decay time at room temperature, which is attributed to a reduction in non-radiative recombination centers. At low temperatures, the role of non-radiative centers is suppressed, and therefore the decay time does not differ significantly for samples with either different nitrogen concentrations or in both the as-grown and annealed samples.

• OSTI ID: 22403015
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION SPECTROSCOPY
ANNEALING
ARSENIDES
CHARGE CARRIERS
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
FLUCTUATIONS
GALLIUM NITRIDES
NITROGEN
PHOSPHIDES
PHOTOLUMINESCENCE
POTENTIALS
RECOMBINATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION
X-RAY SPECTROSCOPY