First principles study of metal contacts to monolayer black phosphorous
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bangalore 560012 (India)
Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal dichalcogenides for future channel material in a metal-oxide-semiconductor transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the side-contact formed by the monolayer BP (mBP) and metals (gold, titanium, and palladium), which are commonly used in experiments. Employing the Density Functional Theory, we analyse the potential barrier, charge transfer and atomic orbital overlap at the metal-mBP interface in an optimized structure to understand how efficiently carriers could be injected from metal contact to the mBP channel. Our analysis shows that gold forms a Schottky contact with a higher tunnel barrier at the interface in comparison to the titanium and palladium. mBP contact with palladium is found to be purely Ohmic, where as titanium contact demonstrates an intermediate behaviour.
- OSTI ID:
- 22402700
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes
Process of fabricating a Schottky barrier photovoltaic detector