High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts

Journal Article · Mon Mar 03 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866340· OSTI ID:22283035

Kang, Jiahao; Liu, Wei; Banerjee, Kaustav ^[1]

---

1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1 eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.

• OSTI ID: 22283035
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
COMPUTERIZED SIMULATION
DENSITY FUNCTIONAL METHOD
ELECTRIC CURRENTS
FERMI LEVEL
FIELD EFFECT TRANSISTORS
INTERFACES
LAYERS
MOLYBDENUM
MOLYBDENUM SULFIDES
SEMICONDUCTOR JUNCTIONS
WORK FUNCTIONS