High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts
Abstract
In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1 eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.
- Authors:
-
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
- Publication Date:
- OSTI Identifier:
- 22283035
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; COMPUTERIZED SIMULATION; DENSITY FUNCTIONAL METHOD; ELECTRIC CURRENTS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; INTERFACES; LAYERS; MOLYBDENUM; MOLYBDENUM SULFIDES; SEMICONDUCTOR JUNCTIONS; WORK FUNCTIONS
Citation Formats
Kang, Jiahao, Liu, Wei, and Banerjee, Kaustav. High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts. United States: N. p., 2014.
Web. doi:10.1063/1.4866340.
Kang, Jiahao, Liu, Wei, & Banerjee, Kaustav. High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts. United States. https://doi.org/10.1063/1.4866340
Kang, Jiahao, Liu, Wei, and Banerjee, Kaustav. 2014.
"High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts". United States. https://doi.org/10.1063/1.4866340.
@article{osti_22283035,
title = {High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts},
author = {Kang, Jiahao and Liu, Wei and Banerjee, Kaustav},
abstractNote = {In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1 eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.},
doi = {10.1063/1.4866340},
url = {https://www.osti.gov/biblio/22283035},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 104,
place = {United States},
year = {Mon Mar 03 00:00:00 EST 2014},
month = {Mon Mar 03 00:00:00 EST 2014}
}