Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Kwon, Jiseok; Delker, Collin J.; Janes, David B.; Harris, Charles T.; Das, Suprem R.

doi:10.1002/pssa.201900880

Title: Molybdenum Contacts to MoS ₂ Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Journal Article · Wed Jun 17 00:00:00 EDT 2020 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.201900880· OSTI ID:1633688

Kwon, Jiseok ^[1]; Delker, Collin J. ^[2]; Janes, David B. ^[1]; Harris, Charles T. ^[2];

^[3]

School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University 1205 W State St. West Lafayette IN 47907 USA
Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87185 USA
Department of Industrial and Manufacturing Systems Engineering Department of Electrical and Computer Engineering Kansas State University Manhattan KS 66506 USA

MoS ₂ has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS ₂ field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS ₂ Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS ₂ provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS ₂ transistors with prior studies using other contact metals.

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Sponsoring Organization:: USDOE

OSTI ID:: 1633688

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science Vol. 217 Journal Issue: 17; ISSN 1862-6300

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 3 works

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