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Title: An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

Abstract

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2},more » an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.« less

Authors:
; ;  [1]
  1. Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-164 40 (Sweden)
Publication Date:
OSTI Identifier:
22402508
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CURRENT DENSITY; DOPED MATERIALS; HETEROJUNCTIONS; INDIUM PHOSPHIDES; IRON; LAYERS; PHOTODIODES; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SOLAR CELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VAPOR PHASE EPITAXY

Citation Formats

Sun, Y. T., E-mail: yasun@kth.se, Omanakuttan, G., and Lourdudoss, S. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth. United States: N. p., 2015. Web. doi:10.1063/1.4921992.
Sun, Y. T., E-mail: yasun@kth.se, Omanakuttan, G., & Lourdudoss, S. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth. United States. doi:10.1063/1.4921992.
Sun, Y. T., E-mail: yasun@kth.se, Omanakuttan, G., and Lourdudoss, S. Mon . "An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth". United States. doi:10.1063/1.4921992.
@article{osti_22402508,
title = {An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth},
author = {Sun, Y. T., E-mail: yasun@kth.se and Omanakuttan, G. and Lourdudoss, S.},
abstractNote = {An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.},
doi = {10.1063/1.4921992},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}