Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence

Journal Article · Sun Dec 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4904514· OSTI ID:22399166

Rémiens, D. ^[1]; Sama, N. ^[2]; Lasri, T. ^[3]

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1. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DOAE Department, University of Valenciennes et du Hainaut Cambresis, Le Mont Houy, 59313 Valenciennes Cedex 9 (France)
2. Institut National de la Recherche Scientifique - Energie Matériaux et Télécommunications (INRS-EMT), 10 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada)
3. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DHS Department, University of Lille1 Sciences and Technologies, 59652 Villeneuve d'Ascq Cedex (France)

350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.

• OSTI ID: 22399166
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM OXIDES
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
ELECTRIC FIELDS
FINITE ELEMENT METHOD
GHZ RANGE
LAYERS
MICROSTRUCTURE
PERMITTIVITY
PEROVSKITE
POLYCRYSTALS
PZT
RELAXATION TIME
SPUTTERING
SUBSTRATES
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION