Highly resistive epitaxial Mg-doped GdN thin films
- Centre de Recherche sur l'Hétéro-Épitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique, Rue Bernard Gregory, 06560 Valbonne (France)
- MacDiarmid Institute for Advanced Materials and Nanotechnology, Robinson Research Institute, Victoria University of Wellington, P.O. Box 33436, Lower Hutt 5046 (New Zealand)
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 10{sup 3} Ω cm and carrier concentrations of 10{sup 16 }cm{sup −3} are obtained for films with Mg concentrations up to 5 × 10{sup 19} atoms/cm{sup 3}. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali, B. J. Ruck, H. J. Trodahl, D. L. Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Phys. Rev. B 87, 035202 (2013)].
- OSTI ID:
- 22399114
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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