Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al{sub 2}O{sub 3}/Si using hard x-ray photoelectron spectroscopy
- University of Delaware, Newark, Delaware 19711 (United States)
- Synchrotron Research, Inc., Upton, New York 11973 (United States)
Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxide-semiconductor (MOS) samples consisting of Si, thick and thin Al{sub 2}O{sub 3}, and a Ti metal cap. Using Si 1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal information about the location and roles of charges throughout the MOS layers. With different oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment values between the thin and thick films, which are explained by the behavior of mobile charge within the Al{sub 2}O{sub 3} layer.
- OSTI ID:
- 22398954
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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