Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication
- Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305 (United States)
- Department of Material Science and Engineering, Stanford University, Stanford, California 94305-4045 (United States)
We describe the fabrication of III-V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates using molecular-beam epitaxy. Migration-enhanced epitaxy and low temperature normal GaAs growth produced a sufficiently smooth surface to deposit gate oxides. A 300 nm thick GaAs buffer layer was grown, followed by a 10 nm growth of In{sub 0.2}Ga{sub 0.8}As high mobility channel layer. An 8.5 nm thick Al{sub 2}O{sub 3} layer was deposited ex situ by atomic-layer deposition. Capacitance-voltage (C-V) characteristics show the unpinning of Fermi level. This work suggests this materials combination as a promising candidate for the design of advanced, nonclassical complementary MOS and optoelectronic devices on Si substrates.
- OSTI ID:
- 21102028
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 20; Other Information: DOI: 10.1063/1.2929386; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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