Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe){sub 2}O{sub 3}/SrRuO{sub 3} heterostructures

Journal Article · Mon Apr 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917249· OSTI ID:22398863

Oh, Seol Hee; Lee, Ji Hye; Shin, Ran Hee; Jo, William ^[1]; Shin, Yooleemi ^[2]; Meny, Christian ^[2]

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1. Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
2. Institute of Physics and Chemistry of Materials of Strasbourg, UMR 7504, University of Strasbourg-CNRS, Strasbourg 67043 (France)

Room-temperature reversible remnant polarization of gallium ferrite thin-films is reported as a multiferroic material with non-zero order parameters of polarization and magnetization. With the addition of Fe ions in Ga sites, Ga{sub 0.6}Fe{sub 1.4}O{sub 3} (GFO) thin films have been considered as potentially promising of multiferroicity. The b-axis oriented epitaxial GFO films were grown on SrRuO{sub 3}(111)/SrTiO{sub 3}(111). The six-fold symmetric in-plane epitaxy of the GFO films was confirmed using X-ray diffraction. The magnetic moment of the films was measured as a function of temperature and external magnetic field, which shows a room-temperature non-zero magnetization. Macroscopic and microscopic methods have been applied to demonstrate the polarization switching of the films. The remnant polarization is measured as 0.05 μC/cm{sup 2}. Reduction of leaky behaviors of the GFO films owing to the conducting oxide of SrRuO{sub 3} will pave a way to take advantage of the room-temperature non-zero multi-orders for future non-volatile memory device applications.

• OSTI ID: 22398863
• Journal Information: Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROMAGNETISM
COUPLING
CRYSTAL GROWTH
EPITAXY
FERRITES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IRON IONS
MAGNETIC FIELDS
MAGNETIC MOMENTS
MAGNETIZATION
MEMORY DEVICES
ORDER PARAMETERS
POLARIZATION
RUTHENIUM OXIDES
STRONTIUM TITANATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION