Laser generation in polycrystalline Cr{sup 2+}:ZnSe with undoped faces

Journal Article · Sat Jan 31 00:00:00 EST 2015 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2015V045N01ABEH015712· OSTI ID:22395800

Savin, D V; Gavrishchuk, E M; Ikonnikov, V B; Eremeykin, O N ^[1]; Egorov, A S ^[2]

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1. G.G.Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)
2. N. I. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod (Russian Federation)

An original method has been suggested for producing polycrystalline Cr{sup 2+}:ZnSe samples with undoped faces. Generation characteristics of a Cr{sup 2+}:ZnSe laser are studied under pulse-periodic pumping by a Tm{sup 3+}:YLF-laser. The efficiency of converting the pump radiation into laser generation at a wavelength of 2350 nm is 20%. Cr{sup 2+}:ZnSe samples exhibit high resistance to surface breakdown. (lasers)

• OSTI ID: 22395800
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 45, Issue 1; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BREAKDOWN
CHROMIUM IONS
EFFICIENCY
NEAR INFRARED RADIATION
POLYCRYSTALS
PULSES
PUMPING
SEMICONDUCTOR LASERS
THULIUM IONS
ZINC SELENIDES