Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

Journal Article · Mon Jan 05 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905345· OSTI ID:22395644

Halder, Nripendra N. ^[1]; Biswas, Pranab; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava ^[2]; Kundu, Souvik ^[3]

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1. Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
2. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
3. Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.

• OSTI ID: 22395644
• Journal Information: Applied Physics Letters, Vol. 106, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
CURRENT DENSITY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
INTERFACES
ORGANOMETALLIC COMPOUNDS
PHOTOVOLTAIC CONVERSION
QUANTUM DOTS
SILICON
SOLAR CELLS
STRAINS
SUBSTRATES
VISIBLE SPECTRA