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Title: Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Abstract

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

Authors:
;  [1]; ;  [2];  [3];  [4];  [4]
  1. Department of Electrical and Electronics Engineering, Bilkent University, 06800, Ankara, Turkey and UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara (Turkey)
  2. UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara, Turkey and Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara (Turkey)
  3. Department of Electrical and Electronics Engineering, Bilkent University, 06800, Ankara (Turkey)
  4. (Turkey)
Publication Date:
OSTI Identifier:
22392116
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; AMMONIA; ANNEALING; CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDES; HOLLOW CATHODES; HYDROGEN; METALS; OPTOELECTRONIC DEVICES; PERFORMANCE; PHOTODETECTORS; PLASMA; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS

Citation Formats

Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr, Tekcan, Burak, Ozgit-Akgun, Cagla, Biyikli, Necmi, Okyay, Ali Kemal, E-mail: aokyay@ee.bilkent.edu.tr, UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara, and Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films. United States: N. p., 2015. Web. doi:10.1116/1.4903365.
Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr, Tekcan, Burak, Ozgit-Akgun, Cagla, Biyikli, Necmi, Okyay, Ali Kemal, E-mail: aokyay@ee.bilkent.edu.tr, UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara, & Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films. United States. doi:10.1116/1.4903365.
Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr, Tekcan, Burak, Ozgit-Akgun, Cagla, Biyikli, Necmi, Okyay, Ali Kemal, E-mail: aokyay@ee.bilkent.edu.tr, UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara, and Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara. Thu . "Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films". United States. doi:10.1116/1.4903365.
@article{osti_22392116,
title = {Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films},
author = {Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr and Tekcan, Burak and Ozgit-Akgun, Cagla and Biyikli, Necmi and Okyay, Ali Kemal, E-mail: aokyay@ee.bilkent.edu.tr and UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara and Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara},
abstractNote = {Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.},
doi = {10.1116/1.4903365},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 33,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}