Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Journal Article · Mon Jun 16 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4884061· OSTI ID:22299927

Tekcan, B. ^[1]; Ozgit-Akgun, C.; Biyikli, N. ^[2]

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1. Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey)
2. UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey)

We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperature reported for GaN based transistors, so far.

• OSTI ID: 22299927
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HOLLOW CATHODES
LAYERS
PLASMA
POLYCRYSTALS
TEMPERATURE RANGE 0400-1000 K
THIN FILMS