Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

Journal Article · Thu Jan 15 00:00:00 EST 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4903951· OSTI ID:22392112

Sinha, Soumyadeep; Mahuli, Neha ^[1]

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1. Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 °C. Growth rate of 1.3 Å per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films.

• OSTI ID: 22392112
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM SULFIDES
CRYSTAL GROWTH
CRYSTALS
DEPOSITS
FOURIER TRANSFORMATION
HYDROGEN SULFIDES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MICROBALANCES
QUARTZ
SURFACES
THIN FILMS
TIME-OF-FLIGHT METHOD