Effect of crystal quality on performance of spin-polarized photocathode

Journal Article · Mon Nov 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902337· OSTI ID:22392043

Jin, Xiuguang ^[1]; Ozdol, Burak ^[2]; Yamamoto, Masahiro ^[3]; Mano, Atsushi; Yamamoto, Naoto ^[4]; Takeda, Yoshikazu ^[5]

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1. Institute for Advanced Research, Nagoya University, Nagoya 464-8603 (Japan)
2. NCEM, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
3. High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan)
4. Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8602 (Japan)
5. Nagoya Industrial Science Research Institute, Nagoya 4640819 (Japan)

GaAs/GaAsP strain-compensated superlattices (SLs) with thickness up to 90-pair were fabricated. Transmission electron microscopy revealed the SLs are of high crystal quality and the introduced strain in SLs layers are fixed in the whole SL layers. With increasing SL pair number, the strain-compensated SLs show a less depolarization than the conventional strained SLs. In spite of the high crystal quality, the strain-compensated SLs also remain slightly depolarized with increasing SL pairs and the decrease in spin-polarization contributes to the spin relaxation time. 24-pair of GaAs/GaAsP strain-compensated SL demonstrates a maximum spin-polarization of 92% with a high quantum efficiency of 1.6%.

• OSTI ID: 22392043
• Journal Information: Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALS
DEPOLARIZATION
GALLIUM ARSENIDES
LAYERS
PHOSPHORUS
PHOTOCATHODES
QUANTUM EFFICIENCY
SPIN ORIENTATION
STRAINS
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY