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Title: CdTe X-ray detectors under strong optical irradiation

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4902188· OSTI ID:22392037
;  [1]
  1. Institute for Microelectronics and Microsystems – Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy)

The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

OSTI ID:
22392037
Journal Information:
Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English